For the predeposition heat treatment of a semicon , gallium atoms are to be diffused into silicon at a temperature of 1150"C for 2.5 h. If the required concentration of Ga at a position 2 um below the surface is 8 X 10" atoms/m3, compute the required surface concentration of Ga. Assume the following: (i) The surface concentration remains constant ii) The background concentration is 2x10" Ga atoms/m' (ii) Preexponential and activation energy values are 3.74x10's m'/s and 3.39 eV/atom, respectively.