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Ok so in photon electronics we have the classic silicon PN junction but we also have Titanium oxide semi-conducting layers that require no PN junction. A common utilized compound element used would be BaTiO3 and it has a dielectric strength of 2000 V / Micro meter. I would imagine to create a 4000 V potential difference across 2 micro meters we would not only need to multiply the charge by 4 to create an electric potential difference of 2000V but we would actually need to continue to increase the charge to raise it to 4000V needed for the 2 micro meter distance. How can BaTiO3 have a dielectric breakdown of 2000 V / micro meter if the strength is incrementally multiplied when raising voltage to 4000 V over 2 micro meters? Is there something I don't understand here? I know static electric charge well, I understand coloumbs law and how it applies. I know charge needed to attain a voltage remains the same but increases based on distance from source as long as the dielectric is constant. It just doesn't compute with me, much thanks to whoever solves this.
Sagot :
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